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MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G,
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
100
V
Average Rectified Forward Current
(TL
= 150
°C)
IO
2.0
A
Non?Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
130
A
Storage Temperature Range
Tstg
?65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
?65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction?to?Lead (Note 2)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
JCL
14
12
°C/W
Thermal Resistance, Junction?to?Ambient (Note 2)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
RJA
75
71
°C/W
Thermal Resistance, Junction?to?Ambient (Note 3)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
RJA
275
230
°C/W
2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board.
3. Mounted with minimum recommended pad size 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
TJ
= 25
°C
TJ
= 125
°C
Maximum Instantaneous Forward Voltage
(Note 4)
(iF
= 2.0 A)
vF
0.79
0.65
V
Maximum Instantaneous Reverse Current (Note 4)
(VR
= 100 V)
IR
0.008
1.5
mA
4. Pulse Test: Pulse Width ≤
380
s, Duty Cycle ≤
2.0%.
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